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首頁 >DS1230>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
DS1230AB-100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-100IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-100-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-120IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-120-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-150	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-150IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-150-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-200	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-200IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-200-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-70	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-70IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-70-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-85	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-85IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-85-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230AB-P100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas
DS1230ABP-100	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	Dallas Dallas Semiconductor	Dallas

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產(chǎn)品屬性

產(chǎn)品編號(hào)：
DS1230AB-100
制造商：
Analog Devices Inc./Maxim Integrated
類別：
集成電路（IC） > 存儲(chǔ)器
包裝：
管件
存儲(chǔ)器類型：
非易失
存儲(chǔ)器格式：
NVSRAM
技術(shù)：
NVSRAM（非易失性 SRAM）
存儲(chǔ)容量：
256Kb（32K x 8）
存儲(chǔ)器接口：
并聯(lián)
寫周期時(shí)間 - 字，頁：
100ns
電壓 - 供電：
4.75V ~ 5.25V
工作溫度：
0°C ~ 70°C（TA）
安裝類型：
通孔
封裝/外殼：
28-DIP 模塊（0.600"，15.24mm）
供應(yīng)商器件封裝：
28-EDIP
描述：
IC NVSRAM 256KBIT PAR 28EDIP

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市星佑電子有限公司	DS1230AB-100	DALLAS	05+	DIP	1289	全新原裝絕對(duì)自己公司現(xiàn)貨	詢價(jià)
深圳市華鑫創(chuàng)達(dá)電子有限公司	DS1230AB-100	TOKO	22+	SOT23-5	10000	公司原裝現(xiàn)貨,歡迎咨詢	詢價(jià)
深圳市匯萊威科技有限公司	DS1230AB-100	DALLAS	24+	DIP	13500	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
深圳市凱斯宇科技有限公司	DS1230AB-100	MaximIntegratedProducts	2022	ICNVSRAM256KBIT100NS28DI	5058	原廠原裝正品,價(jià)格超越代理	詢價(jià)
深圳市昌和盛利電子有限公司	DS1230AB-100	DALLAS	23+	DIP	18689		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	DS1230AB-100	DALLAS	2016+	DIP	6526	只做原裝正品!假一賠十!只要有上一定有貨的!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	DS1230AB-100	DALLAS	24+	DIP	119		詢價(jià)
深圳市佳鑫美電子科技有限公司	DS1230AB-100	DALLAS	22+	DIP	5000	絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	DS1230AB-100	DALLAS	23+	DIP-28	5000	原裝正品,假一罰十	詢價(jià)
深圳市英科美電子有限公司	DS1230AB-100	DALLAS	2021+	模塊	1600	自家?guī)齑?百分之百原裝	詢價(jià)

更多DS1230供應(yīng)商更新時(shí)間2024-11-16 10:32:00

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