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FDD6635

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features ?59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NA
24+
SOP-24
60
只做原廠渠道 可追溯貨源
 詢價(jià)
NA
1948+
SOP24
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
NA
23+
SOP24
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
NA
2023+
SOP24
8700
原裝現(xiàn)貨
 詢價(jià)
EP6645
998
998
詢價(jià)
PCA
2021+
1SIL4
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
PCA
新
174
全新原裝 貨期兩周
 詢價(jià)
ST
24+
DIP
200
詢價(jià)
MOTOROLA/摩托羅拉
00+
DIP
1
原裝現(xiàn)貨支持BOM配單服務(wù)
 詢價(jià)
MOTOROLA/摩托羅拉
QQ咨詢
DIP
104
全新原裝 研究所指定供貨商
 詢價(jià)
更多EP6635供應(yīng)商 更新時(shí)間2025-1-27 16:36:00

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