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ETD4435

General Power Transformer

SUMIDASumida America Components Inc.

勝美達電子

FDMC4435BZ

P-ChannelPowerTrench?MOSFET-30V,-18A,20.0m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDMS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-18A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435

30VP-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435

P-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mW@VGS

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDS4435A

P-ChannelLogicLevelPowerTrench??OSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?–9A,–30V.RDS(ON)=0.017Ω@VGS=

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435A

P-ChannelLogicLevelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435A-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FDS4435-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435SQ

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435SQusesadvancedtrenchtechnologytoprovideexcellentR shoot-throughimmunity,bodydiodecharacteristicsandltra-lowgateresistance. ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. APPLICATIONS BatterySwitch L

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FS4435

SingleP-ChannelEnhancementModePowerMOSFET

FortuneFortune Semiconductor Corp.

富晶富晶電子股份有限公司

FTK4435

HighPowerandcurrenthandingcapability

FS

First Silicon Co., Ltd

詳細參數(shù)

  • 型號:

    ETD4435

  • 制造商:

    SUMIDA

  • 制造商全稱:

    Sumida Corporation

  • 功能描述:

    General Power Transformer

供應商型號品牌批號封裝庫存備注價格
FERROXCUBE
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19960
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Infineon(英飛凌)
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Infineon
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標準封裝
5000
原廠授權一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質保
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INFINEON/英飛凌
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48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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Infineon(英飛凌)
23+
BGPB60ECO1
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
詢價
INFINEON
23+
GOOP
8000
只做原裝現(xiàn)貨
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更多ETD4435供應商 更新時間2024-12-23 9:00:00