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1SS193

Marking：F3；Package：SOT-23；Surface mount switching diode

FEATURES ●LowforwardvoltageVF(3)=0.9V(typ). ●Smalltotalcapacitance:CT=0.9pF(typ). ●Fastreverserecoverytime:trr=1.6ns(typ). APPLICATIONS ●Highspeedswitchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

1SS193

Marking：F3；Package：SOT-23；SWITCHING DIODE

FEATURES Lowforwardvoltage Fastreverserecoverytime

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

1SS193

Marking：F3；Package：SOT-23；Switching Diodes SOT-23 Plastic-Encapsulate Diodes

FEATURES: ●LOWForwardVoltage ●FastReverseRecoveryTime

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

AP66300FVBW-13

Marking：F3；Package：U-QFN4040-16/SWP；3.8V TO 60V INPUT, 3A LOW IQ SYNCHRONOUS BUCK CONVERTER

Features -VIN3.8to60V -3AContinuousOutputCurrent -VOUTAdjustablefrom0.8Vto50V -EnhancedEfficiencyModewithBias -AdjustableSwitchingFrequency.500kHzDefaultFrequency -Start-upwithPre-biasedOutput -ExternalSoft-StartwithTracking–Sequential,Ratiometric,or Ab

DIODES

Diodes Incorporated

BAS21CW

Marking：F3；Silicon Epitaxial Planar Diodes

SiliconEpitaxialPlanarDiodes HighVoltageSwitchingDiodes

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

BC846BQB

Marking：F3；Package：SOT8015；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BC846BQB-Q

Marking：F3；Package：SOT8015；65 V, 100 mA NPN general-purpose transistor

Featuresandbenefits ?Highpowerdissipationcapability ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotivea

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BQ29705DSER

Marking：F3；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州儀器

BQ29705DSET

Marking：F3；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1Features ?Inputvoltagerangepack+:VSS–0.3Vto12V ?FETdrive: –CHGandDSGFETdriveoutput ?VoltagesensingacrossexternalFETsfor overcurrentprotection(OCP)iswithin±5mV (typical) ?Faultdetection –Overchargedetection(OVP) –Over-dischargedetection(UVP) –Charge

TI1Texas Instruments

德州儀器

BZD27C33P

Marking：F3；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

詳細(xì)參數(shù)

  • 型號：

    F3

  • 制造商：

    BEAVERSWOOD

  • 功能描述：

    LABEL 0-9 YELLOW 14X19MM 36XEACH

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