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FCP9N60N

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP9N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCPF9N60NT

N-ChannelSupreMOS?MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF9N60NT

N-ChannelMOSFET600V,9A,0.385廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF9N60NT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=385mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB9N60

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB9N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB9N60A

IRPLLNR5WideRangeInputLinearFluorescentBallast

IRF

International Rectifier

IRFB9N60A

Switchmodepowersupply

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60APBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowersw

IRF

International Rectifier

IRFS9N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.75?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS9N60A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60A

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

IRFS9N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60APBF

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

IRFS9N60APBF

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS9N60ATRL

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FSC
24+
TO220
65300
一級(jí)代理/放心購買!
詢價(jià)
KERSEMI
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
FAIRCHILD/仙童
22+
TO220
9000
原裝正品
詢價(jià)
KERSEMI
22+
TO-220
6000
十年配單,只做原裝
詢價(jià)
KERSEMI
23+
TO-TO-220
12301
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
FAIRCHILD/仙童
22+
TO220
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
FAIRCHILD/仙童
22+
TO220
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價(jià)
KERSEMI
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
FSC
23+
TO220
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
FSC
23+
TO220
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多FCP9N60C供應(yīng)商 更新時(shí)間2025-1-8 15:26:00