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FDD6676

30V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed.extremelylowRDS(ON

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6676

N-channel Advanced Mode Power MOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6676A

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676AS

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676AS

N-channel Advanced Mode Power MOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6676AS_NL

30V N-Channel PowerTrench SyncFET

GeneralDescription TheFDD6676ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676ASincludesapatentedcombinationofaMOS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676S

30V N-Channel PowerTrench MOSFET

GeneralDescription TheFDS6676SisdesignedtoreplaceaDPAKMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6676SincludesanintegratedSchottkydiodeusing

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6676S

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=78A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD6676S

N-channel Advanced Mode Power MOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號:

    FDD6676

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO252
154495
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
FAIRCHILD
SOT252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價(jià)
onsemi(安森美)
23+
TO-252
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
ON/安森美
24+
TO-252
505348
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
仙童
06+
TO-252
12000
原裝庫存
詢價(jià)
FAIRCHILD
23+
TO252
9526
詢價(jià)
FAIRCHILD
23+
SOT252
9365
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
FSC
2020+
TO252
2000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
24+
SOT-252
1371
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多FDD6676供應(yīng)商 更新時(shí)間2025-1-22 15:40:00