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FDD6690S

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP6690

30VN-ChannelPowerTrenchSyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6690SincludesanintegratedSchottkydi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6690S

30VN-ChannelPowerTrenchSyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6690SincludesanintegratedSchottkydi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6690S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDS6690

SingleN-ChannelLogicLevelPWMOptimizedPowerTrenchMOSFET

GeneralDescription ThisNChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheMOSFETfeaturesfasterswitchingandlowergatechargethanotherMOSFETswithcompar

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6690A

DualNotebookPowerSupplyN-ChannelPowerTrenchSyncFET?

GeneralDescription TheFDS6986SisdesignedtoreplacetwosingleSO-8MOSFETsandSchottkydiodeinsynchronousDC:DCpowersuppliesthatprovidevariousperipheralvoltagesfornotebookcomputersandotherbatterypoweredelectronicdevices.FDS6986Scontainstwounique30V,N-channel,logicl

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6690A

30VN-ChannelMOSFET

Features Fastswitchingspeed Lowgatecharge Highperformancetrenchtechnologyforextremely lowRDS(ON) Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=11A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

FDS6690A

SingleN-Channel,LogicLevel,PowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6690AS

30VN-ChannelPowerTrench?SyncFET?

GeneralDescription TheFDS6690ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6690ASincludesanintegratedSchottkydio

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6690AS

N-ChannelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號:

    FDD6690A_Q

  • 功能描述:

    MOSFET 30V N-Ch PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Fairchild
23+
TO-252
7750
全新原裝優(yōu)勢
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FAIRCHILD/仙童
23+
SOT252
50000
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FAIRCHILD/仙童
24+
TO-252
15000
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FAIRCHILD/仙童
2022
SOT252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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FAIRCHILD/仙童
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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FAIRCHILD/仙童
TO-252
貨真價(jià)實(shí),假一罰十
25000
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FAIRCHILD/仙童
22+
TO-252
31250
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
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FAIRCHILD/仙童
22+
TO-252
40256
本公司只做原裝進(jìn)口現(xiàn)貨
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FSC
23+
TO-252
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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FAIRCHILD
23+
NA
3543
專做原裝正品,假一罰百!
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更多FDD6690A_Q供應(yīng)商 更新時(shí)間2025-2-2 9:18:00