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FCPF11N60T

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF11N60T

General Description

GeneralDescription SuperFET?is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FMC11N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMC11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMI11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMP11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV11N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMV11N60E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

HFF11N60S

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HMS11N60I

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS11N60K

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ISPP11N60CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISPW11N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

KP11N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I

KECKEC CORPORATION

KEC株式會(huì)社

KP11N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I

KECKEC CORPORATION

KEC株式會(huì)社

KPS11N60D

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會(huì)社

KPS11N60F

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會(huì)社

KSM11N60

Loweffectiveoutputcapacitance

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
22+
TO220
10000
原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
FAIRCHILD/仙童
24+
TO-220F
34
只做原廠渠道 可追溯貨源
詢價(jià)
onsemi(安森美)
23+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
ON/安森美
SMD
23+
6000
專(zhuān)業(yè)配單原裝正品假一罰十
詢價(jià)
FAIRCHILD
24+
TO-220F
8866
詢價(jià)
FSC進(jìn)口原
17+
TO-220F
6200
詢價(jià)
FAIRCHI
21+
TO-220F
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
FAIRCHILD/仙童
22+
TO220F
27433
原裝正品現(xiàn)貨
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
FAIRCHILD
23+
TO-220F
66800
原廠授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源!
詢價(jià)
更多FCPF11N60T供應(yīng)商 更新時(shí)間2024-12-25 15:16:00