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首頁 >HMS11N60K>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HMS11N60K	文件：688.54 Kbytes Page：7 Pages	600V N-Channel MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導體深圳市華之美半導體有限公司	HMSEMI
ISPP11N60CFD	文件：338.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
ISPW11N60CFD	文件：335.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXFH11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
KP11N60D	文件：388.24 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC
KP11N60F	文件：390.31 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC
KPS11N60D	文件：388.63 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
KPS11N60F	文件：390.57 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
KSM11N60	文件：2.00345 Mbytes Page：9 Pages	Loweffectiveoutputcapacitance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
貿澤芯城（深圳）電子科技有限公司	HMS11N65D	HM	23+	TO263	28888	原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市駿創(chuàng)達科技有限公司	HMS1201S003	TE/泰科	2420+	/	178148	一級代理,原裝正品!	詢價
深圳市鵬順微電子科技有限公司	HMS1201S004	TE Connectivity	2022+	原廠原包裝	8600	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市德力誠信科技有限公司	HMS1201S006	TE	24+	con	100	現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index	詢價
現(xiàn)代芯城（深圳）科技有限公司	HMS1201S110M		24+	N/A	56000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市高捷芯城科技有限公司	HMS1201S111M	TE Connectivity(美國泰科)	23+	插件	7350	現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!	詢價
深圳市芯睿晨電子有限公司	HMS1201S111M	TE Connectivity Aerospace, Def	23+	原廠封裝	436	現(xiàn)貨常備產(chǎn)品原裝	詢價
上海金慶電子技術有限公司	HMS1201S111P	TEConnectivity	新		5	全新原裝貨期兩周	詢價
上海市鑫鴻達電子	HMS1201S111P	TE Connectivity	2022+		1	全新原裝貨期兩周	詢價
深圳市科恒偉業(yè)電子有限公司	HMS1201S118M	OOMMINST	1736+	RELAY	8529	專營繼電器只做原裝正品假一賠十!	詢價

更多HMS11N60K供應商更新時間2024-11-19 11:10:00

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