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FF900R12IP4D

PrimePACK?? Modul mit Trench/Feldstopp IGBT4, gr??erer Emitter Controlled 4 Diode und NTC

ElectricalFeatures ?ExtendedOperationTemperatureTvjop ?HighDCStability ?HighShortCircuitCapability,SelfLimitingShortCircuitCurrent ?UnbeatableRobustness ?EnlargedDiodeforregenerativeoperation ?VCEsatwithpositiveTemperatureCoefficient ?LowVCEsat MechanicalFea

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4D

E v a l u a t i o n D r i v e r B o a r d f o r 1 2 0 0 V PrimePACK?

1Introduction The2ED250E12-FevaluationdriverboardshowninFig.1wasdevelopedtosupportcustomersduringtheir firstdesignstepswiththe1200VPrimePACK?IGBTmodule.Theevaluationdriverboardisafully functionalIGBTmoduledriverwheretwo1ED020I12-FdriverICprocesscontrola

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4DV

PrimePACK?2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC

ElectricalFeatures ?ExtendedOperationTemperatureTvjop ?HighDCStability ? HighShortCircuitCapability,SelfLimitingShort CircuitCurrent ?LowVCEsat ?UnbeatableRobustness ?VCEsatwithpositiveTemperatureCoefficient ?EnlargedDiodeforregenerativeoperation Mechanica

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4DBOSA2

包裝:托盤(pán) 封裝/外殼:模塊 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - IGBT - 模塊 描述:IGBT MOD 1200V 900A 5100W

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4DVBOSA1

包裝:散裝 封裝/外殼:模塊 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - IGBT - 模塊 描述:IGBT MOD 1200V 900A 5100W

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

DF900R12IP4D

PrimePACK??ModulmitTrench/FeldstoppIGBT4,gr??ererEmitterControlled4Diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

DF900R12IP4DV

TechnischeInformation/TechnicalInformation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FD900R12IP4D

PrimePACK2ModulmitTrench/FeldstoppIGBT4,grobererEmitterControlled4Diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FD900R12IP4DV

TechnischeInformation/TechnicalInformation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4

EvaluationDriverBoardfor1200VPrimePACK?

1Introduction The2ED250E12-FevaluationdriverboardshowninFig.1wasdevelopedtosupportcustomersduringtheir firstdesignstepswiththe1200VPrimePACK?IGBTmodule.Theevaluationdriverboardisafully functionalIGBTmoduledriverwheretwo1ED020I12-FdriverICprocesscontrola

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4

PrimePACK2ModulmitTrench

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4

PrimePACK2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC

ElectricalFeatures ?ExtendedOperationTemperatureTvjop ?HighDCStability ?HighShortCircuitCapability,SelfLimitingShortCircuitCurrent ?UnbeatableRobustness ?VCEsatwithpositiveTemperatureCoefficient ?LowVCEsat MechanicalFeatures ?4kVAC1minInsulation ?Package

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4P

PrimePACK??ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode

ElectricalFeatures ?Highshort-circuitcapability ?Highsurgecurrentcapability ?Highcurrentdensity ?Tvjop=150°C ?VCEsatwithpositivetemperaturecoefficient MechanicalFeatures ?4kVAC1mininsulation ?PackagewithCTI>400 ?Highcreepageandclearancedistances ?Integra

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FF900R12IP4V

PrimePACK?2modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC

ElectricalFeatures ?ExtendedOperationTemperatureTvjop ?HighDCStability ?HighShortCircuitCapability,SelfLimitingShort CircuitCurrent ?LowVCEsat ?UnbeatableRobustness ?VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures ?4kVAC1minInsulation ?Packag

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FR900R12IP4D

PrimePACK?3ModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode

ElectricalFeatures ?Highshort-circuitcapability ?Highcurrentdensity ?LowVCEsat ?Tvjop=150°C ?VCEsatwithpositivetemperaturecoefficient ?Enlargeddiodeforregenerativeoperation MechanicalFeatures ?4kVAC1mininsulation ?PackagewithCTI>400 ?Highcreepageand

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    FF900R12IP4D

  • 功能描述:

    IGBT 模塊 N-CH 1.2KV 900A

  • RoHS:

  • 制造商:

    Infineon Technologies

  • 產(chǎn)品:

    IGBT Silicon Modules

  • 配置:

    Dual 集電極—發(fā)射極最大電壓

  • VCEO:

    600 V

  • 集電極—射極飽和電壓:

    1.95 V 在25

  • C的連續(xù)集電極電流:

    230 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    445 W

  • 最大工作溫度:

    + 125 C

  • 封裝/箱體:

    34MM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
8015
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INFINEON
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N/A
1689
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Infineon Technologies
23+
Module
1262
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英飛凌
新批次
N/A
1500
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INFINEON/英飛凌
12+
MODULE
1290
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INF
24+
2
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infineon
13+
14258
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Infineon
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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INF
2018+
26976
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17+
MODULE
1020
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更多FF900R12IP4D供應(yīng)商 更新時(shí)間2024-12-23 14:16:00