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FGW30N60VD

Discrete IGBT (High-Speed V series) 600V / 30A

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwith

TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

G30N60

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar

Intersil

Intersil Corporation

G30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G30N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

HIA30N60BP

600VPTIGBT

SEMIHOW

SemiHow Co.,Ltd.

HIH30N60BP

600VPTIGBT

SEMIHOW

SemiHow Co.,Ltd.

ICE30N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ICE30N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

IGB30N60T

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB30N60T

LowLossIGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB30N60T

LowLossIGBTinTrenchStoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGP30N60T

LOWLOSSIGBTINTRENCHANDFILEDSTOPTECHNOLOGY

LowLossIGBTinTrenchandFieldstoptechnology ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptiblePowerSupply ?TrenchandFieldstoptechnologyfor600Vapplication

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGP30N60T

LowLossIGBTinTrenchStopandFieldstoptechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FGW30N60VD

  • 制造商：

    Fuji Electric

  • 功能描述：

    IGBT 30A 600V Trench-FS V Series TO247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FujiElectric
18+
NA
3019
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢(xún)價(jià)
FUJI/富士電機(jī)
23+
TO-247
10000
公司只做原裝正品
 詢(xún)價(jià)
FUJI/富士電機(jī)
22+
TO-247
6000
十年配單,只做原裝
 詢(xún)價(jià)
FUJI/富士電機(jī)
23+
TO-247
12300
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
FUJI
原廠封裝
1000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
Fuji Electric
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
FUJITSU/富士通
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
FUJI
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級(jí)代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢(xún)價(jià)
FUJI/富士電機(jī)
2023+
module
48000
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
 詢(xún)價(jià)
FUJITSU/富士通
22+
TO-247
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
更多FGW30N60VD供應(yīng)商 更新時(shí)間2024-12-23 14:16:00

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