零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | Intersil Intersil Corporation | Intersil | ||
DC/DCConverterApplications Features ?LowON-resistance. ?4.0Vdrive. ?Ultrahigh-speedswitching. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會(huì)社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd. 飛特帝亞英商飛特帝亞有限公司 | FTDI |
詳細(xì)參數(shù)
- 型號(hào):
FP234
- 制造商:
Cornell Dubilier Electronics
- 制造商:
Mallory Sonalert Products Inc
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
23+ |
TSOP |
3003 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | |||
DIODES/美臺(tái) |
24+ |
SEAM7050 |
25500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售 |
詢價(jià) | ||
24+ |
N/A |
52000 |
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
JXT |
FPC 0.5mm間距 6P 翻蓋 鍍金 1H |
70794 |
一級(jí)代理百分百有貨,原裝正品現(xiàn)貨,支持實(shí)單! |
詢價(jià) | |||
Triad |
24+ |
NA |
3249 |
只做原裝正品,專注終端BOM表整單供應(yīng) |
詢價(jià) | ||
昆山 |
1836+ |
connector |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
昆山 |
22+ |
connector |
3255 |
強(qiáng)勢(shì)庫存!原裝現(xiàn)貨! |
詢價(jià) | ||
昆山 |
22+ |
connector |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價(jià) | ||
昆山 |
16+ |
connector |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
昆山 |
24+ |
connector |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) |
相關(guān)規(guī)格書
更多- FP24
- FP240
- FP-2400S
- FP24-1000
- FP24-250
- FP24-500
- FP25/SM58=-G4
- FP25/SM58=-L4
- FP25/VP68=-G5
- FP25/VP68=-J3
- FP250
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- FP2-BP12
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- FP2-DEV-S
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- FP2-EC
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- FP-2R5RE102M-R5XX
- FP-2R5RE152M-R7XX
- FP-2R5RE471M-F8XX
- FP2RCEI
- FP2RCIW
- FP2-RTD
- FP2-S047-R
相關(guān)庫存
更多- FP24/841/HO/ECO
- FP2400015
- FP24-100
- FP24-2000
- FP24-250B
- FP2458-VP6RPC
- FP25/SM58=-H5
- FP25/VP68=-G4
- FP25/VP68=-H5
- FP25/VP68=-L4
- FP-2500S
- FP25121P1
- FP25F
- FP25R12KE3V1
- FP25R12KS4CV2
- FP25R12KT4
- FP25R12KT4B15BOSA1
- FP25R12W2T4
- FP25S
- FP-2600DPM
- FP268K11%TR750
- FP-2700S
- FP2A52
- FP2-AD8
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- FP2-DA4
- FP2DCIG
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- FP2-DPV1-S
- FP2P 2.4K 1%TR5
- FP-2R5ME821M-HAR
- FP-2R5RE101M-F8XX
- FP-2R5RE152M-R5XX
- FP-2R5RE331M-F8XX
- FP-2R5RE561M-E5XX
- FP2RCIG
- FP2RCWH
- FP2-S047
- FP2-S068