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FQAF6N70

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.74A@TC=25℃ ·DrainSourceVoltage- :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF6N80

800V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF6N80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF6N90

900V N-Channel MOSFET

Features ?4.5A,900V,RDS(on)=1.9?@VGS=10V ?Lowgatecharge(typical40nC) ?LowCrss(typical17pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF70N08

80V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF70N08

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=53.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.017Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF70N10

100V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF70N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=45A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF70N15

N-Channel Power MOSFET

Features ?44A,150V,RDS(on)=0.028?@VGS=10V ?Lowgatecharge(typical135nC) ?LowCrss(typical135pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF70N15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    FQA

  • 制造商:

    Fairchild Semiconductor

  • 功能描述:

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
FOX
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
FSC
17+
TO-3P
9888
只做原裝,現(xiàn)貨庫存
詢價
FSC
23+
TO3P
9526
詢價
FAIRCHILD
23+
TOP3
7635
全新原裝優(yōu)勢
詢價
FAIRCHILD/仙童
23+
NA
2860
原裝正品代理渠道價格優(yōu)勢
詢價
FSC
24+
TO-3P
20000
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!!
詢價
FAIRCHIL
24+
TO-247
6980
原裝現(xiàn)貨,可開13%稅票
詢價
FAIRCHILD
TO-3P
6300
正品原裝--自家現(xiàn)貨-實單可談
詢價
ON/安森美
24+
TO-3P-3
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
詢價
FAI
2004+
TO220-3
25
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
更多FQA供應(yīng)商 更新時間2025-4-22 15:59:00