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首頁 >FQA16N25C>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQA16N25C	文件：869.62 Kbytes Page：8 Pages	250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQA16N25C	文件：362.76 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=17.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQAF16N25	文件：421.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQAF16N25	文件：715.48 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQAF16N25C	文件：857.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?16A,250V,RDS(on)=0.23?@VGS=10V ?Lowgatecharge(typical27nC) ?LowCrss(typical23pF) ?Fastswitching ?100	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB16N25CTM	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD16N25C	文件：298.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQD16N25C	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD16N25CTF	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD16N25CTM	文件：688.68 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI16N25	文件：752.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?16A,250V,RDS(on)=0.23?@VGS=10V ?Lowgatecharge(typical27nC) ?LowCrss(typical23pF) ?Fastswitching ?100	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI16N25C	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI16N25CTU	文件：761.96 Kbytes Page：9 Pages	250VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP16N25	文件：736.69 Kbytes Page：8 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP16N25	文件：301.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQP16N25C	文件：246.79 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicatio	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQP16N25C	文件：1.13842 Mbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF16N25	文件：737.59 Kbytes Page：8 Pages	250VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號：
FQA16N25C
功能描述：
MOSFET 250V N-Channel Advance Q-FET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市高捷芯城科技有限公司	FQA16N25C	onsemi(安森美)	23+	TO-3P	8110	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價(jià)
深圳市勤思達(dá)科技有限公司	FQA16N25C	FAIRCHILD	1215+	TO-247	150000	全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).	詢價(jià)
深圳市永貝爾科技有限公司	FQA16N25C	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市鼎盛源芯科技有限公司	FQA16N25C	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢	詢價(jià)
深圳市納艾斯科技有限公司	FQA16N25C	FAIRCHI	2020+	TO-3P	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
瀚佳科技(深圳)有限公司	FQA16N25C	FAIRC	24+	TO-3P	16800	絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?	詢價(jià)
深圳市科雨電子有限公司	FQA16N25C	ON	1503+	TO-3P	3000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	FQA16N25C	FAIRCHILD/仙童	23+	TO-3P	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	FQA16N25C	Fairchild/ON	22+	TO3P3 SC653	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市鵬順微電子科技有限公司	FQA16N25C	ON Semiconductor	2022+	TO-3P-3,SC-65-3	38550	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價(jià)

更多FQA16N25C供應(yīng)商更新時(shí)間2025-1-8 15:57:00

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