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FQD2N90TM

N-Channel QFET? MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI2N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI2N90

900VN-ChannelMOSFET

Features ?2.2A,900V,RDS(on)=7.2?@VGS=10V ?Lowgatecharge(typical12nC) ?LowCrss(typical5.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP2N90

900VN-ChannelMOSFET

Features ?2.2A,900V,RDS(on)=7.2?@VGS=10V ?Lowgatecharge(typical12nC) ?LowCrss(typical5.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF2N90

900VN-ChannelMOSFET

Features ?1.4A,900V,RDS(on)=7.2Ω@VGS=10V ?Lowgatecharge(typical12nC) ?LowCrss(typical5.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N90

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N90

900VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N90

N-ChannelQFET?MOSFET900V,1.7A,7.2廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU2N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HFD2N90

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

HFD2N90

900VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP2N90

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS2N90

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFU2N90

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFU2N90

900VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

KSM2N90

900VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB2N90

900VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD2N90

900VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMI2N90

900VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU2N90

900VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    FQD2N90TM

  • 功能描述:

    MOSFET 900V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi
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更多FQD2N90TM供應(yīng)商 更新時(shí)間2024-12-22 14:13:00