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FQP8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8.0A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.53Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQP8P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF8P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU8P10

100VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU8P10

P-ChannelQFET?MOSFET-100V,-6.6A,530m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU8P10TU

P-ChannelQFET?MOSFET-100V,-6.6A,530m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSM8P10

100VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD8P10

100VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU8P10

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

MTM8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8P10

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

RFM8P10

-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

HARRIS

Harris Corporation

RFP8P10

8A,100V,0.400Ohm,P-ChannelPowerMOSFET

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

Intersil

Intersil Corporation

RFP8P10

-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

HARRIS

Harris Corporation

RFP8P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

V8P10

HighCurrentDensitySurfaceMountTMBS?(TrenchMOSBarrierSchottky)Rectifier

FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    FQI8P10TU

  • 功能描述：

    MOSFET P-CH/100V/8A/0.53OHM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
I2-PAKTO-262
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
FAIRCHILD/仙童
21+
I2-PAKTO-262
30000
優(yōu)勢供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅
 詢價
FAIRCHILD仙童
23+
I2PAK
10000
公司只做原裝正品
 詢價
Fairchild/ON
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
FAIRCHILD/仙童
23+
TO-262
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD/仙童
22+
I2-PAKTO-262
18000
原裝正品
 詢價
ON Semiconductor
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
Fairchild
23+
33500
詢價
Fairchild/ON
23+
TO2623 Long Leads I2Pak TO262A
8000
只做原裝現(xiàn)貨
 詢價
仙童
06+
TO-262
2500
原裝
 詢價
更多FQI8P10TU供應(yīng)商 更新時間2024-12-22 16:00:00

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