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FQP10N20L

200V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP10N20L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF10N20

200VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sproprietaryplanarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF10N20C

iscN-ChannelMOSFETTransistor

?FEATURES ?Withlowgatedriverequirements ?Easytodrive ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF10N20C

200VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF10N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?6.8A,200V,RDS(on)=0.36?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical14pF) ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU10N20

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQU10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU10N20C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    FQP10N20L

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi(安森美)
24+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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harris
16+
原廠封裝
10000
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仙童
2020+
TO-220
6500
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FSC/ON
23+
原包裝原封 □□
2000
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仙童
25+
TO-TO-220
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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VB
25+
TO220AB
5000
原裝正品,假一罰十!
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FAIRCHILD/仙童
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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FAIRCHILD/仙童
22+
6000
220
十年配單,只做原裝
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FAIRCHILD/仙童
22+
220
25000
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更多FQP10N20L供應(yīng)商 更新時(shí)間2025-5-6 15:14:00