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FQP27P06

-60V P-Channel MOSFET

Features *VDS(V)=-60V *ID=-13.5A(VGS=-10V) *RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

FQP27P06

60V P-Channel MOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP27P06

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

27P06

P-ChannelQFET?MOSFET-60V,-27A,70m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

27P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

27P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

27P06

60VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB27P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB27P06

P-ChannelQFET?MOSFET-60V,-27A,70m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB27P06TM

P-ChannelQFET?MOSFET-60V,-27A,70m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI27P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF27P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FQPF27P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

KQB27P06

60VP-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

KSM27P06

60VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB27P06

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF27P06

60VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數

  • 型號：

    FQP27P06

  • 功能描述：

    MOSFET 60V P-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
P-MOSFET/-60V/-27A/RDS(
11695
正邁科技原裝現貨授權代理主營:IC電容.二三級管原裝
 詢價
FAIRCHILD原裝
ROHS全新原裝
TO-220
9782
原裝現貨在線咨詢樣品※技術支持專業(yè)電子元器件授權
 詢價
FAIRCHILD/仙童
24+
TO-220-3
3580
原裝現貨/15年行業(yè)經驗歡迎詢價
 詢價
ON
21+
TO220
950
全新原裝公司現貨
詢價
FAIRCHILD/仙童
24+
TO-220
4
只做原廠渠道 可追溯貨源
 詢價
ON
20+
TO-220
6000
英瑞芯現貨庫存
 詢價
仙童
22+
TO-220
3000
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
仙童
11+
TO-220
9
只做原裝正品
 詢價
onsemi(安森美)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現貨庫存。
 詢價
Fairchild(飛兆/仙童)
24+
NA
25116
原裝正品
 詢價
更多FQP27P06供應商 更新時間2024-12-31 9:12:00

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