零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FQP70N10 | 100V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FQP70N10 | 57A,100V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | |
FQP70N10 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
N-ChannelEnhancementMOSFET Features ?VDS=100V,ID=70A ?RDS(ON)=8.3mΩ@VGS=10V ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
FQP70N10
- 功能描述:
MOSFET 100V N-Channel QFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-220 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
onsemi |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢(xún)價(jià) | ||
FSC |
24+ |
TO-220 |
5000 |
全新進(jìn)口原裝現(xiàn)貨,價(jià)優(yōu) |
詢(xún)價(jià) | ||
FAIRCHI |
16+ |
TO-220 |
8357 |
原裝現(xiàn)貨價(jià)格絕對(duì)優(yōu)勢(shì)Y |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
24+ |
TO-220-3 |
3580 |
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢(xún)價(jià) |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
24+ |
TO-220 |
1782 |
只做原廠渠道 可追溯貨源 |
詢(xún)價(jià) | ||
FAIRCHILD |
24+ |
TO-220 |
8300 |
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)! |
詢(xún)價(jià) | ||
onsemi(安森美) |
23+ |
TO-220 |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
ON/安森美 |
2410+ |
TO-220 |
2218 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢(xún)價(jià) | ||
仙童 |
06+ |
TO-220 |
5000 |
原裝 |
詢(xún)價(jià) |
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