零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FQPF70N10 | 100V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
FQPF70N10 | isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
100VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 強茂股份有限公司 | PANJIT | ||
N-ChannelEnhancementMOSFET Features ?VDS=100V,ID=70A ?RDS(ON)=8.3mΩ@VGS=10V ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
70AMP600VOLT0.030ohmN-ChannelPowerMOSFET | SSDI Solid States Devices, Inc | SSDI | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.018Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
FQPF70N10
- 功能描述:
MOSFET 100V N-Channel QFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
onsemi |
24+ |
TO-220F-3 |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
FSC |
15+ |
原廠原裝 |
3000 |
進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-220 |
3580 |
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價 |
詢價 | ||
ON-SEMI |
20+ |
6000 |
英瑞芯現(xiàn)貨庫存 |
詢價 | |||
onsemi(安森美) |
23+ |
TO-220F |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
仙童 |
06+ |
TO-220F |
3000 |
原裝庫存 |
詢價 | ||
DISCRETE |
50 |
FSC |
3000 |
詢價 | |||
FAIRCHIL |
2015+ |
TO-220F |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
FSC進口原 |
17+ |
TO-220F |
6200 |
詢價 | |||
Fairchi |
2016+ |
TO-220F |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 |
相關規(guī)格書
更多- FQPF7N60
- FQPF7N65CYDTU
- FQPF7N80C
- FQPF85N06
- FQPF8N80C
- FQPF8N90C
- FQPF9N25CT
- FQPF9N50C
- FQPF9N90CT
- FQPF9P25YDTU
- FQS4901TF
- FQT13N06LTF
- FQT1N60CTF_WS
- FQT2P25TF
- FQT3P20TF_SB82100
- FQT4N25TF
- FQT5P10TF-CUTTAPE
- FQT7N10TF
- FQU10N20CTU
- FQU12N20TU
- FQU13N06LTU_WS
- FQU17P06
- FQU1N60CTU
- FQU20N06LTU
- FQU2N60CTU
- FQU2N90TU_WS
- FQU4N50TU_WS
- FQU5N50CTU_WS
- FQU5P20TU
- FQU9N25TU
- FQ-XL2
- FR-01
- FR014H5JZ
- FR01AC10PB
- FR01AC16HB-S
- FR01AR10HB
- FR01AR10PB
- FR01AR10PB-W-S
- FR01AR16PB
- FR01FC10H
- FR01FC10H-06XL-S
- FR01FC10P
- FR01FC10P-W-S
- FR01FC16H-06XL
- FR01FC16H-S
相關庫存
更多- FQPF7N65C
- FQPF7N80
- FQPF7P20
- FQPF8N60CFT
- FQPF8N80CYDTU
- FQPF9N25C
- FQPF9N25CYDTU
- FQPF9N50CF
- FQPF9P25
- FQS4900TF
- FQS4903TF
- FQT13N06TF
- FQT1N80TF_WS
- FQT3P20TF
- FQT4N20LTF
- FQT5P10TF
- FQT7N10LTF
- FQTN35144-UF-10
- FQU11P06TU
- FQU13N06LTU
- FQU13N10LTU
- FQU17P06TU
- FQU1N80TU
- FQU2N100TU
- FQU2N90TU_AM002
- FQU3N50CTU
- FQU5N40TU
- FQU5N60CTU
- FQU8P10TU
- FQ-WN002
- FQ-XT
- FR011L5J
- FR015L3EZ
- FR01AC10PB-S
- FR01AC16PB-S
- FR01AR10HB-S
- FR01AR10PB-S
- FR01AR16HB-S
- FR01AR16PB-W-S
- FR01FC10H-06XL
- FR01FC10H-S
- FR01FC10P-S
- FR01FC16H
- FR01FC16H-06XL-S
- FR01FC16P