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FQT13N06LTF

N-Channel QFET? MOSFET 60 V, 2.8 A, 140 m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQT13N06TF

N-ChannelQFET?MOSFET60V,2.8A,140m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FQU13N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU13N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.115Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU13N06L

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

FQU13N06L

N-ChannelQFET?MOSFET60V,11A,115m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N06L

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N06LTU

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU13N06TU

N-ChannelQFETMOSFET60V,10A,140m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KSM13N06

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSM13N06L

60VLOGICN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD13N06

60VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF13N06

60VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU13N06

60VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

RLD13N06

P-ChannelEnhancementModeMOSFET

Description TheRLD13N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON), lowgatechargeandoperationwithgatevoltagesaslowas4.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. Application Brushlessmotor Loadswitch Unint

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

詳細(xì)參數(shù)

  • 型號：

    FQT13N06LTF

  • 功能描述：

    MOSFET 60V Single

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
SOT-223-4
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ON/安森美
2019+
SOT-223
78550
原廠渠道 可含稅出貨
 詢價
ON/安森美
24+
SOT-223
4000
只做原廠渠道 可追溯貨源
 詢價
ON/安森美
22+
SOT223
6000
原裝正品
 詢價
ON/安森美
20+
SOT-223
120000
原裝正品 可含稅交易
 詢價
ON/安森美
23+
SOT223
13048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
 詢價
ON/安森美
23+
SOT223
17316
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
 詢價
ON(安森美)
23+
SOT-223
9552
公司只做原裝正品,假一賠十
 詢價
ON/安森美
24+
SOT-223
505257
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
ONSEMI/安森美
23+
SOT-223
4000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
 詢價
更多FQT13N06LTF供應(yīng)商 更新時間2024-12-22 14:13:00

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