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FQPF6N80CT

N-Channel QFET? MOSFET 800 V, 5.5 A, 2.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF6N80T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

HM6N80K

Powerswitchcircuitofadaptorandcharger

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXTH6N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH6N80

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH6N80A

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTH6N80A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM6N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM6N80

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM6N80A

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Corporation

IXTM6N80A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KSM6N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KX6N80F

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

MS6N80

800VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

NJ6N80

6.0A800VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N80-BL

6.0A800VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N80F-LI

6.0A800VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ6N80-LI

6.0A800VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

SIHA6N80AE

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Loweffectivecapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?IntegratedZenerdiodeESDprotection ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA6N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號:

    FQPF6N80CT

  • 功能描述:

    MOSFET 800V N-Ch Adv Q-FET C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-220F-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
FAIRCHILD/仙童
24+
TO220F
500
原廠授權(quán)代理 價格絕對優(yōu)勢
詢價
Fairchild
23+
TO-220F
7750
全新原裝優(yōu)勢
詢價
Fairchild
24+
TO-220F
318
詢價
FAIRCHILD
22+23+
TO220F
7646
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
FAIRCHILD/仙童
22+
TO220F
22131
原裝正品現(xiàn)貨
詢價
三年內(nèi)
1983
只做原裝正品
詢價
ON
20+
SMD
11520
特價全新原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
2022+
45
全新原裝 貨期兩周
詢價
ON/安森美
24+
SMD
1000
原裝現(xiàn)貨
詢價
更多FQPF6N80CT供應(yīng)商 更新時間2024-12-22 14:13:00