首頁 >FQPF13N50CF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQPF13N50CF | 500V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FQPF13N50CF | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.54mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
FQPF13N50CF | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
500VN-ChannelMOSFET FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:38nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@VGS=10V ? | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:34nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@vGS=10V ? | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
siliconN-channelEnhancedVDMOSFETs | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY | ||
500VN-ChannelPlanarMOSFET Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY |
詳細(xì)參數(shù)
- 型號：
FQPF13N50CF
- 功能描述：
MOSFET HIGH_VOLTAGE
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
24+ |
TO-220F-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
N/P |
16500 |
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長期穩(wěn)定供應(yīng) |
詢價 | ||
ON/安森美 |
2105+ |
TO-220 |
10053 |
詢價 | |||
FAIRCHILD/仙童 |
19+/20+ |
TO220F |
5118 |
詢價 | |||
onsemi(安森美) |
23+ |
TO-220F |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ON/安森美 |
2410+ |
TO-220F |
30000 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | ||
FAIRCHIL |
23+ |
TO-220F |
7600 |
全新原裝現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
24+ |
TO-220F |
8866 |
詢價 | |||
FSC |
24+ |
TO-220 |
1526 |
全新原裝環(huán)?，F(xiàn)貨 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 |
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