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FQPF6N90C

900V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N90C

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrentID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedswi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQPF6N90C

N-Channel QFET? MOSFET 900 V, 6.0 A, 2.3 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N90CT

N-Channel QFET? MOSFET 900 V, 6.0 A, 2.3 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HFH6N90

900VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP6N90

900VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFS6N90

900VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFS6N90

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

HFW6N90

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HM6N90

ATXPower,LEDPower

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

ISCF6N90C

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrentID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.3Ω(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedswi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH6N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH6N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH6N90

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N90

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM6N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXTH6N90

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH6N90

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH6N90A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH6N90A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    FQPF6N90C

  • 功能描述：

    MOSFET 900V N-Ch Q-FET advance C-Series

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
仙童
13+
T0-220F
10000
深圳市勤思達科技有限公司主營仙童系列全新原裝正品,公司現(xiàn)貨供應FQPF6N90C,歡迎咨詢洽談。
 詢價
FAIRCHILD原裝正品價格
23+
TO-220F
35000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
FAIRCHILD
23+
TO-220F
1896
公司優(yōu)勢庫存熱賣全新原裝!歡迎來電
 詢價
FAIRCHI
16
TO-220F
6000
原裝正品現(xiàn)貨
 詢價
FAIRCHILD
23+
TO-220F
65400
詢價
FAIRCHILD/仙童
2021+
TO-220
8025
優(yōu)勢價格.十年專營渠道.深圳原裝現(xiàn)貨
 詢價
ONSEMI
18+ROHS
NA
8000
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
FAIRCHILD
21+
TO-220F
6880
只做原裝,質(zhì)量保證
 詢價
FAIRCHILD
21/22+
TO-220
23584
原裝正品現(xiàn)貨實單價優(yōu)
 詢價
onsemi/安森美
22+
原裝封裝
1000
品質(zhì)保證,信譽至上
 詢價
更多FQPF6N90C供應商 更新時間2024-12-22 11:04:00

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