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FQN1N50CTA

N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQNL1N50B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP1N50

500VN-ChannelMOSFET

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF1N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU1N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU1N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU1N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU1N50B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HM1N50MR

SilicoN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

KSMD1N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N50

500VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD1N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTD1N50E

TMOSPOWERFET1.0AMPERE500VOLTSRDS(on)=5.0OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N50E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTD1N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD1N50E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP1N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N50E

N??hannelTO??20PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP1N50E

TMOSPOWERFET1.0AMPERES500VOLTSRDS(on)=5.0OHM

TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP1N50E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細參數(shù)

  • 型號：

    FQN1N50CTA

  • 功能描述：

    MOSFET N-CH/400V/5 0A/0.075OHM

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi
24+
TO-92-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
onsemi(安森美)
23+
TO-92-3
9203
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Fairchild
24+
TO-92
4000
詢價
FSC
24+
TO-92
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
FSC/ON
23+
原包裝原封 □□
2600
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
FAIRCHI
2020+
TO-92
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ON
20+
SMD
11520
特價全新原裝公司現(xiàn)貨
 詢價
ON/安森美
24+
SMD
4000
原裝現(xiàn)貨
 詢價
FAIRCHILD
21+
35200
一級代理/放心采購
 詢價
更多FQN1N50CTA供應商 更新時間2024-12-22 14:13:00

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