零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
PolarPowerMOSFETHiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarPowerMOSFETHiperFET Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity | IXYS IXYS Corporation | IXYS | ||
PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET?(ElectricallyIsolatedTab) N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easyt | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
12AMPS,450-500V,0.4OM/0.5OM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
StandardPowerMOSFET Features ●Internationalstandardpackages ●LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarTMPowerMOSFET | IXYS IXYS Corporation | IXYS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FSC仙童 |
22+23+ |
TO-220F |
25633 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
FAIRCHI |
21+ |
TO-220 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
FAIRCHILD |
24+ |
TO-TO-220 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FAIRCHILD |
N/A |
主營模塊 |
190 |
原裝正品,現(xiàn)貨供應(yīng) |
詢價 | ||
HJ替代 |
2011+ |
TO220 |
50000 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
FSC |
2015+ |
TO220 |
19898 |
專業(yè)代理原裝現(xiàn)貨,特價熱賣! |
詢價 |
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