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FQPF5N60

600V N-Channel MOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF5N60

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformanc

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF5N60C

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF5N60C

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF5N60C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU5N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU5N60C

N-ChannelQFETMOSFET600V,2.8A,2.5Ohm

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU5N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU5N60C

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU5N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FQPF5N60

  • 功能描述：

    MOSFET 600V N-Channel QFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC
23+
TO-220F
12
全新原裝現(xiàn)貨
 詢價
FSC
21+
TO-220F
58600
全新原裝現(xiàn)貨誠信經營
 詢價
onsemi(安森美)
23+
TO-220F
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FCS
24+
TO 220
156082
明嘉萊只做原裝正品現(xiàn)貨
 詢價
FSC
2015+
TO220F
19898
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
 詢價
FAIRCHILD
23+
TO-220
9526
詢價
仙童
06+
TO-220F
4000
原裝
 詢價
HJ替代
2011+
TO220F
50000
全新原裝進口自己庫存優(yōu)勢
 詢價
FAIRCHIL
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
FSC
23+
TO220
7635
全新原裝優(yōu)勢
 詢價
更多FQPF5N60供應商 更新時間2025-1-22 9:03:00

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