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零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

HFD6N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFD6N60U

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

HFP6N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS6N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HY6N60FT

600V/6.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

HY6N60T

600V/6.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRF6N60

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF6N60FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIB6N60A

PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A)

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri

IRF

International Rectifier

IRFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIB6N60APBF

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會社

KSM6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

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FAIRCHILD/仙童
23+
TO-220F
31000
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22+23+
TO-220F
24745
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VBSEMI
24+
con
35960
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FAIRCHILD/仙童
22+
TO220
20000
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FAIRCHILD/仙童
2122+
TO220
19990
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FAIRCHILD/仙童
2023+
TO220
29
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仙童
23+
TO-220F
3000
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VBSEMI/臺灣微碧
23+
TO-220F1
50000
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VBSEMI/臺灣微碧
23+
TO-220F1
20000
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FAIRCHILD/仙童
09+
TO220F
950
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更多FQPF6N60C==FAIRCHILD供應(yīng)商 更新時間2025-1-3 14:14:00