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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

KF9N25D

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KF9N25D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=7.5A ·Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF9N25F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai

KECKEC CORPORATION

KEC株式會(huì)社

KF9N25P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai

KECKEC CORPORATION

KEC株式會(huì)社

KSM9N25C

250VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD9N25

250VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF9N25C

250VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU9N25

250VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB9N25E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB9N25E

TMOSPOWERFET9.0AMPERES250VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP9N25

TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP9N25E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP9N25E

TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQU9N25TU_WS

  • 功能描述：

    MOSFET 250V 7.4A 0.42OHM N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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PLCC
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2022
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2300
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9852
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30000
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HBA
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22+
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50000
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更多FQU9N25TU_WS供應(yīng)商 更新時(shí)間2025-1-3 16:30:00

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