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FSGYC260R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSGYC260R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSGYC260R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSJ260D

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

FUZETECFuzetec Technology Co., Ltd.

富致科技富致科技股份有限公司

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

RFERFE international

RFE國際公司RFE國際股份有限公司

FSPYC260F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號:

    FSGYC260R

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFET

供應商型號品牌批號封裝庫存備注價格
NIEC
17+
TO-220F
6200
詢價
NIEC
24+
TO-220F-2pin
8866
詢價
NIEC
2021+
TO-220F
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
NEC
23+
TO-220F
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
NIEC
22+
TO-220F
25000
絕對全新原裝現(xiàn)貨
詢價
NIEC
23+
TO-220
2800
正品原裝貨價格低
詢價
RECTRON
05+
原廠原裝
33716
只做全新原裝真實現(xiàn)貨供應
詢價
新電源
2020+
TO220F-
9500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
NIEC
21+
TO220F
19000
只做正品原裝現(xiàn)貨
詢價
NIEC
21+
TO220
82
原裝現(xiàn)貨假一賠十
詢價
更多FSGYC260R供應商 更新時間2025-2-3 16:00:00