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FXT451

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES *60VoltVCEO *1Ampcontinuouscurrent *Ptot=1Watt

Zetex

Zetex Semiconductors

GDBAD451Z

GlobalDistributionBlocks

Littelfuselittelfuse

力特力特公司

GDBAD451Z

GDBSERIESTOUCH-SAFEPOWR-BLOKS

Description POWR-BLOKSTMGlobalDistributionBlocksaddsafetyand mountingversatilitytoourdistributionblocksolutions.The GlobalDistributionBlocksareapprovedtoULstandards. TheGlobalDistributionBlocksareIP20fingersafetoreduce theriskofcontactandeliminatetheneedfo

Littelfuselittelfuse

力特力特公司

GDBAP451Z

GlobalDistributionBlocks

Littelfuselittelfuse

力特力特公司

GDBAP451Z

GDBSERIESTOUCH-SAFEPOWR-BLOKS

Description POWR-BLOKSTMGlobalDistributionBlocksaddsafetyand mountingversatilitytoourdistributionblocksolutions.The GlobalDistributionBlocksareapprovedtoULstandards. TheGlobalDistributionBlocksareIP20fingersafetoreduce theriskofcontactandeliminatetheneedfo

Littelfuselittelfuse

力特力特公司

GL451

BIDIRECTIONALEMISSIONTYPEINFRAREDLIGHTEMITTINGDIODE

BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

GR451

DiscCeramicCapacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

馬洛里

GT451

DiscCeramicCapacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

馬洛里

HMC451

GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,5.0-20.0GHz

Hittite

Hittite Microwave Corporation

HMC451

GaAsPHEMTMMICMEDIUMPOWERAMPLIFIER,5-20GHz

Hittite

Hittite Microwave Corporation

HMC451

Point-to-PointRadios

MICROSS

Micross Components

HMC451

GAASPHEMTMMICMEDIUMPOWERAMPLIFIER

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HVA-451

VoltageVariableAttenuator

MINI

Mini-Circuits

HVA-451+

VoltageVariableAttenuator

MINI

Mini-Circuits

HW451

1/2WATTMETAL

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

HWS451

GaAsDC-6GHzSP4TSwitch

Description TheHWS451isaGaAsPHEMTMMICSP4TswitchoperatingatDC-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS451featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b/

HWHexawave, Inc

漢威光電股份有限公司

IRF451

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF451

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF451

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP451

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    FXT451

  • 功能描述:

    兩極晶體管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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ZETEX
23+
E-LINE
10000
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PacTec
215
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PacTec
2022+
211
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ZTX
06+
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2051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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ROHM
24+
SOT153
5000
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ZETEX
2023+
SOT-92
5800
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ZXTEX
23+
SOT-92
5000
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ZETEX
24+
原廠封裝
6300
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ZETEX
23+
NA
3500
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ZETEX
24+
2700
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更多FXT451供應(yīng)商 更新時(shí)間2025-1-10 16:21:00