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IRF3315

N-ChannelMOSFETTransistor

?DESCRITION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤70m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3315

PowerMOSFET(Vdss=150V,Rds(on)=0.07ohm,Id=27A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315L

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315L

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3315LPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315LPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF3315S

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3315S

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    G3315

  • 制造商:

    ROEBUCK

  • 功能描述:

    RBK POLYTHENE ANTI-SPLASH FUNNEL 7.5

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20+
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2896
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24+
N/A
67000
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INTEL
21+
標(biāo)準(zhǔn)封裝
5000
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NICHTEK
23+
ROHS
9400
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NICHTEK
24+
ROHS
990000
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DIODES/美臺
23+
NA
12730
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DIODES/美臺
24+
NA
30000
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Diodes
22+
NA
3745
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DIODES
兩年內(nèi)
NA
3660
實(shí)單價格可談
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Pericom
2010+
N/A
2212
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更多G3315供應(yīng)商 更新時間2021-9-14 10:50:00