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G4PF50W

INSULATED GATE BIPOLAR TRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?

IRF

International Rectifier

G4PF50WD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

IRF

International Rectifier

IRG4PF50W

IGBT

DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRG4PF50W

INSULATEDGATEBIPOLARTRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?

IRF

International Rectifier

IRG4PF50WD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

IRF

International Rectifier

IRG4PF50WDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Features ?OptimizedforuseinWeldingandSwitch-ModePowerSupplyapplications ?Industrybenchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconduct

IRF

International Rectifier

IRG4PF50WDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PF50WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PF50WPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=900V VCE(on)typ.=2.25V @VGE=15V,IC=28A Benefits ?Lowerswitchinglossesallowmorecost-effectiveoperationandhenceefficientreplacementoflargerdieMOSFETsupto100kHz ?Ofparticularbenefitinsingle-endedconvertersandPowerSupplies150Wandhigher ?Reductionin

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    G4PF50W

  • 制造商：

    International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO-247
1520
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
IR
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
IR
2016+
TO-247
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
IR
23+
TO247
48
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價(jià)
IR
12+
TO-247
2500
原裝現(xiàn)貨/特價(jià)
 詢價(jià)
23+
TO-3P
65480
詢價(jià)
INTERRECT
24+
35200
一級(jí)代理/放心采購
 詢價(jià)
IR
23+
TO-247
10000
公司只做原裝正品
 詢價(jià)
IR
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
22+
TO-247
9000
原裝正品
 詢價(jià)
更多G4PF50W供應(yīng)商 更新時(shí)間2025-3-3 16:30:00

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