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GA2

包裝:袋 類別:工業(yè)自動(dòng)化與控制 氣動(dòng),液壓 - 配件 描述:GAUGE ADAPTOR

ENERPAC PRODUCTION AUTOMATION

ENERPAC PRODUCTION AUTOMATION

ENERPAC PRODUCTION AUTOMATION

GA200

SCRs Nanosecond Switching, Planar

DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GA200A

SCRs Nanosecond Switching, Planar

DESCRIPTION TheMicrosemiNanosecondThyristorSwitchcombinestheturn-onspeedoflogicleveltransistorswithhighcurrentswitchingcapabilityinSCRs. FEATURES ●RiseTime:10ns ●DelayTime:10ns ●RecoveryTime:0.5μS ●PulseCurrent:to100A ●Turn-onwith20ns,10mAGatePulse

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GA200HS60S

HALF-BRIDGE IGBT INT-A-PAK

Features ?Generation4IGBTTechnology ?Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz ?VeryLowConductionLosses ?Industrystandardpackage Benefits ?Increasedoperatingefficiency ?Directmountingtoheatsink ?Performanceoptimi

IRF

International Rectifier

GA200HS60S1

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features ?Generation4IGBTTechnology ?Standardspeed:optimizedforhardswitchingoperatingfrequenciesupto1000Hz ?VeryLowConductionLosses ?Industrystandardpackage Benefits ?Increasedoperatingefficiency ?Directmountingtoheatsink ?Performanceoptimi

IRF

International Rectifier

GA200HS60S1PBF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES ?Generation4IGBTtechnology ?Standard:OptimizedforhardswitchingspeedDCto1kHz ?Verylowconductionlosses ?Industrystandardpackage ?ULapprovedfileE78996 ?ComplianttoRoHSdirective2002/95/EC ?Designedandqualifiedforindustriallevel BENEFITS ?Increased

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200NS61U

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?HEXFRED?antiparalleldiodeswithultra-softrecovery ?Industrystandardpackage ?ULapproved ?Generation4IGBTtechnology B

IRF

International Rectifier

GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60S

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60SP

INSULATED GATE BIPOLAR TRANSISTOR

INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda

IRF

International Rectifier

GA200SA60SP

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60SP

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ?Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?ComplianttoRoHSdirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60SP_V01

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ?Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?ComplianttoRoHSdirective

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200SA60U

INSULATED GATE BIPOLAR TRANSISTOR

Features ?UltraFast:Optimizedforminimumsaturationvoltageandoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2,500VoltAC/RMS) ?Verylowinternalinductance(≤5nHtyp.) ?

IRF

International Rectifier

GA200SA60UP

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES ?Ultrafast:Optimizedforminimumsaturationvoltageandspeedupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2500VAC/RMS) ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200TD120U

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?HEXFRED?antiparalleldiodeswithultra-softrecovery ?Industrystandardpackage ?ULapproved ?Generation4IGBTtechnology B

IRF

International Rectifier

GA200TS60U

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?HEXFRED?antiparalleldiodeswithultra-softrecovery ?Industrystan

IRF

International Rectifier

GA200TS60UPBF

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A FEATURES ?Generation4IGBTtechnology ?Ultrafast:Optimizedforhighspeed8kHzto40kHzinhardswitching,>200kHzinresonant mode ?Verylowconductionandswitchinglosses ?HEXFRED?antiparalleldiodeswithul

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

GA200TS60UX

Ultra-FastTM Speed IGBT

HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features ?Generation4IGBTtechnology ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?HEXFREDTMantiparalleldiodeswithul

IRF

International Rectifier

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    GA2

  • 制造商:

    ENERPAC PRODUCTION AUTOMATION

  • 類別:

    工業(yè)自動(dòng)化與控制 > 氣動(dòng),液壓 - 配件

  • 系列:

    GA

  • 包裝:

  • 類型:

    Gauge Adapter

  • 描述:

    GAUGE ADAPTOR

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更多GA2供應(yīng)商 更新時(shí)間2024-12-22 15:13:00