首頁 >GC2M0080120D>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

C2M0080120D

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=80mΩ（TYP.）@VGS=20VTJ=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

C2M0080120D

SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?AvalancheRuggedness ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?IncreasedPowerDensity ?

WOLFSPEED

WOLFSPEED, INC.

C2M0080120D

SiliconCarbidePowerMOSFETZ-FETTMMOSFET

CreeCree, Inc

科銳

C2M0080120D

CREESiliconCarbideMOSFETEvaluationKit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科銳

S2M0080120D

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120J

1200VSICPOWERMOSFET

Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=77mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120K

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?“-A”isanAEC-Q101qualifieddevice ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120N

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0080120T

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=77mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

供應商型號品牌批號封裝庫存備注價格
SUPSiC(國晶微半導體)
23+
TO247-3
3000
熙佳有 原裝正品現(xiàn)貨，訂貨，BOM配單
 詢價
24+
N/A
65000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
PANASONIC/松下
23+
QFP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
PANASONIC/松下
2022
QFP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
/
QFP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
PANASON/松下
23+
NA/
3512
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
PANASONIC
23+
QFP
66
現(xiàn)貨庫存
 詢價
德國艾賽斯
2022+
1000
只做原裝，可提供樣品
 詢價
GeneSiC
23+
標準封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢價
IXFN
2023+
module
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
更多GC2M0080120D供應商 更新時間2025-1-6 13:14:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多