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GJ01N60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheGJ01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsand suitedforAC/DCconverters. Features *Dynamicdv/dtRating *SimpleDriveRequir

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GM01N60D/U

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H01N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60I

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M01N60

NChannelMOSFET

[STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M01N60

NChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    GJ01N60

  • 制造商：

    GTM

  • 制造商全稱：

    GTM

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GTM
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
GTM
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
GTM
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
SECOS
22+
SOT-252
20000
保證原裝正品,假一陪十
 詢價(jià)
SECOS
22+
SOT-252
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
GTM
04PB
TO252
1377
詢價(jià)
24+
N/A
82000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
GTM
23+
TO-252
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
MUR
156000
全新原裝現(xiàn)貨 樣品可售
 詢價(jià)
MUR
24+
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
 詢價(jià)
更多GJ01N60供應(yīng)商 更新時(shí)間2025-2-8 9:03:00

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