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H01N60I

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M01N60

NChannelMOSFET

[STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M01N60

NChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

MSL01N60

600VN-ChannelMOSFETs

BWTECH

Bruckewell Technology LTD

NDD01N60

N-ChannelPowerMOSFET600V,8.5ohm

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD01N60

N-ChannelPowerMOSFET600V,8.5

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    H01N60I

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
HSMC
12+
TO-251
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
HSMC
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
HSMC
18+
TO-251
41200
原裝正品,現(xiàn)貨特價
 詢價
AP
23+
TO-263
69820
終端可以免費供樣,支持BOM配單!
 詢價
HSMC
21+
TO-251
30000
只做正品原裝現(xiàn)貨
 詢價
HSMC
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價
HSMC
21+
TO-251
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗
 詢價
HUAJING
23+
TO-251
10000
公司只做原裝正品
 詢價
HUAJING
22+
TO-251
6000
十年配單,只做原裝
 詢價
HUAJING
23+
TO-251
6000
原裝正品，支持實單
 詢價
更多H01N60I供應(yīng)商 更新時間2025-2-15 9:02:00

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