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H01N60I

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M01N60

NChannelMOSFET

[STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M01N60

NChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

MSL01N60

600VN-ChannelMOSFETs

BWTECH

Bruckewell Technology LTD

NDD01N60

N-ChannelPowerMOSFET600V,8.5ohm

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD01N60

N-ChannelPowerMOSFET600V,8.5

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    H01N60I

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-Channel Power Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HSMC
12+
TO-251
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
HSMC
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
HSMC
18+
TO-251
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
AP
23+
TO-263
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
HSMC
22+
TO-251
20000
保證原裝正品,假一陪十
 詢價(jià)
HUAJING
22+
TO-251
6000
十年配單,只做原裝
 詢價(jià)
HUAJING
23+
TO-251
6000
原裝正品，支持實(shí)單
 詢價(jià)
HSMC
22+
TO-251
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
HUAJING
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
HUAJING
24+
TO-251
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
更多H01N60I供應(yīng)商 更新時(shí)間2025-3-22 11:04:00

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