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GT4

PNEUMATIC TURBINE VIBRATIORS

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GT40

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

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GT40G121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

The4thGeneration CurrentResonanceInverterSwitchingApplications ?Enhancement-mode ?Highspeed:tf=0.30μs(typ.)(IC=60A) ?Lowsaturationvoltage:VCE(sat)=1.8V(typ.)(IC=60A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40J121

Discrete IGBTs Silicon N-Channel IGBT

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40J321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40J322

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40M101

N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40M301

N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40Q321

Voltage Resonance Inverter Switching Application

VoltageResonanceInverterSwitchingApplication ?Fifth-generationIGBT ?Enhancementmodetype ?Highspeed:tf=0.41μs(typ.)(IC=40A) ?Lowsaturationvoltage:VCE(sat)=2.8V(typ.)(IC=40A) ?FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40Q321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40Q322

Voltage Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40QR21

Discrete IGBTs Silicon N-Channel IGBT

Features 1.6.5thgeneration 2.TheRC-IGBTconsistsofafreewheelingdiodemonolithicallyintegratedinanIGBTchip. 3.Enhancementmode 4.High-speedswitching IGBT:tf=0.20μs(typ.)(IC=40A) FWD:trr=0.60μs(typ.)(IF=15A) 5.Lowsaturationvoltage:VC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T101

N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T301

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

ParallelResonanceInverterSwitchingApplications ??????? ?FRDincludedbetweenemitterandcollector ?Enhancementmodetype ?HighspeedIGBT:tf=0.25μs(typ.)(IC=40A) FRD:trr=0.7μs(typ.)(di/dt=?20A/μs) ?Lowsaturationvoltage:VCE(sat)=3.7V(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T302

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

ParallelResonanceInverterSwitchingApplications ?FRDincludedbetweenemitterandcollector ?Enhancementmode ?HighspeedIGBT:tf=0.23μs(typ.)(IC=40A) FRD:trr=0.7μs(typ.)(di/dt=?20A/μs) ?Lowsaturationvoltage:VCE(sat)=3.7V(typ.)(IC=

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T302

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T321

Consumer Application Voltage Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT40T321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT410

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

馬洛里

GT411

Disc Ceramic Capacitors

-GeneralPurpose -IdealForUseinNon-critical Coupling,BypassandFilterApplications -ConformallyCoated -RadialLeads

MALLORYMallory Sonalert Products Inc.

馬洛里

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    PNEUMATIC TURBINE VIBRATIORS

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