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GT6

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GT605G

6 Amp Glass Passivated Quick Connect Rectifier

Features ?Packagesuitableforassembly ?Glasspassivatedjunction ?Highcurrentcapability ?Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-O ?RoHScompliant

TAITRON

TAITRON Components Incorporated

GT60J321

The 4th Generation Soft Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J322

The 4th Generation Soft Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J323

Gate Bipolar Transistor Silicon N Channel IGBT

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J323

Current Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J323

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J323H

Current Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60J323H

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M104

N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M301

N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M302

N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M303

INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

HIGHPOWERSWITCHINGAPPLICATIONS ●FourthgenerationIGBT ●FRDincludedbetweenemitterandcollector ●Enhancementmodetype ●Highspeed IGBT:tf=0.25μs(TYP.) FRD:trr=0.7μs(TYP.) ●Lowsaturationvoltage:VCE(sat)=2.1V(TYP.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M303

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M322

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

VoltageResonanceInverterSwitchingApplication ?Enhancementmodetype ?Highspeed:tf=0.09μs(typ.)(IC=60A) ?Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=60A) ?FRDincludedbetweenemitterandcollector ?TO-3P(LH)(Toshibapackagename)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M323

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M324

Consumer Application Voltage Resonance Inverter Switching Application

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

GT60M324

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào)：

    GT6

  • 制造商：

    TSC

  • 制造商全稱：

    Taiwan Semiconductor Company, Ltd

  • 功能描述：

    6.0 AMPS. Glass Passivated Rectifiers

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
23+
TO-3PL
9526
詢價(jià)
MARVELL
23+
原廠原封□□□
20000
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨
 詢價(jià)
TOS
23+
IGBT單管TO-3P
4000
進(jìn)口原裝現(xiàn)貨庫(kù)存,特價(jià),只售原裝正品
 詢價(jià)
TOSHIBA
23+
TO/3P
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
GAL
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
2022
SOP20
2058
原廠原裝正品,價(jià)格超越代理
 詢價(jià)
24+
QFP
1920
詢價(jià)
INFINEON
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
GALLEO
16+
BGA
40
原裝現(xiàn)貨假一罰十
 詢價(jià)
TOS
16+
TO-3PL
10000
全新原裝現(xiàn)貨
 詢價(jià)
更多GT6供應(yīng)商 更新時(shí)間2024-11-17 14:00:00

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