GTVA220701FA-V1-R2分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

GTVA220701FA-V1-R2屬于分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產(chǎn)的GTVA220701FA-V1-R2晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input matched

? Typical CW performance, 1880 MHz, 48 V

- Output power at P3dB = 45 W

- Efficiency = 60.7

- Gain = 21.6 dB

? Human Body Model, Class 1A (per ANSI/ESDA/

JEDEC JS-001)

? Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

? RoHS-compliant