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    IRF123

    N-CHANNELPOWERMOSFETS

    FEATURES ?LowRDs

    SamsungSamsung semiconductor

    三星三星半導體

    IRF123

    NanosecondSwitchingSpeeds

    ISCInchange Semiconductor Company Limited

    無錫固電無錫固電半導體股份有限公司

    IRF123

    IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

    Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導體新澤西半導體產(chǎn)品股份有限公司

    IRF123

    N-ChannelPowerMOSFETs,11A,60-100V

    Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導體新澤西半導體產(chǎn)品股份有限公司

    IRF123

    N-ChannelPowerMOSFETs,11A,60-100V

    Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

    NJSEMINew Jersey Semi-Conductor Products, Inc.

    新澤西半導體新澤西半導體產(chǎn)品股份有限公司

    IRF123

    N-ChannelPowerMosfets,

    ARTSCHIP

    ARTSCHIP ELECTRONICS CO.,LMITED.

    IRFD123

    1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

    Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

    HARRIS

    Harris Corporation

    IRFD123

    PowerMOSFET

    DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

    VishayVishay Siliconix

    威世科技威世科技半導體

    IRFD123

    PowerMOSFET

    FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

    VishayVishay Siliconix

    威世科技威世科技半導體

    IRFD123PBF

    PowerMOSFET

    DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

    VishayVishay Siliconix

    威世科技威世科技半導體

    詳細參數(shù)

    • 型號：

      HB123D

    • 制造商：

      HUASHAN

    • 制造商全稱：

      HUASHAN

    • 功能描述：

      NPN SILICON TRANSISTOR

    供應商型號品牌批號封裝庫存備注價格
    Eaton
    22+
    NA
    168
    加我QQ或微信咨詢更多詳細信息,
    		 詢價
    POWERSTOR/EATON
    23+
    DIP
    15777
    原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
    		 詢價
    PANASONIC
    2016+
    DIP
    24562
    全新原裝,假一罰十,公司主營繼電器!
    		 詢價
    松下
    1736+
    RELAY
    8529
    專營繼電器只做原裝正品假一賠十!
    		 詢價
    PANASONIC/松下
    2018+
    DIP
    23216
    假一罰十/本公司只做原裝正品
    		 詢價
    PANASONIC
    20+
    DIP通信繼電器
    2890
    只做原裝現(xiàn)貨繼電器
    		 詢價
    松下
    2023+環(huán)?，F(xiàn)貨
    專業(yè)繼電器
    6800
    專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
    		 詢價
    松下
    23+
    DIP
    5000
    專注配單,只做原裝進口現(xiàn)貨
    		 詢價
    松下
    23+
    DIP
    5000
    專注配單,只做原裝進口現(xiàn)貨
    		 詢價
    TI
    24+
    SSOP14
    22
    		詢價
    更多HB123D供應商 更新時間2025-4-26 10:08:00

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