IRFD123中文資料HARRIS數(shù)據(jù)手冊(cè)PDF規(guī)格書
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Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
IRFD123
- 功能描述:
MOSFET N-Chan 100V 1.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
9428+ |
DIP4 |
1490 |
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詢價(jià) | ||
MOTOROLA/摩托羅拉 |
2023+ |
DIP-4 |
6893 |
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詢價(jià) | ||
IR |
21+ |
DIP |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
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HAR |
2020+ |
80000 |
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詢價(jià) | |||
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20+ |
na |
65790 |
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24+ |
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2021+ |
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100500 |
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詢價(jià) | ||
VISHAY |
1923+ |
DIP-4 |
6896 |
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HAR |
23+ |
HD-1 |
8000 |
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詢價(jià) | ||
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22+23+ |
DIP-4 |
27001 |
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詢價(jià) |