IRFD123中文資料HARRIS數(shù)據(jù)手冊(cè)PDF規(guī)格書
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Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào)：
IRFD123
- 功能描述：
MOSFET N-Chan 100V 1.3 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP4 |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
HAR |
2020+ |
80000 |
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詢價(jià) | |||
VISHAY(威世) |
23+ |
HVMDIP4 |
6000 |
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詢價(jià) | ||
MOT |
1802+ |
DIP4 |
6528 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價(jià) | ||
MOTOROLA |
9428+ |
DIP4 |
1490 |
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詢價(jià) | ||
VISHAY(威世) |
23+ |
HVMDIP4 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
VISHAY |
22+23+ |
DIP-4 |
27001 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
6100 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
SI |
2021+ |
DIP4 |
6001 |
百分百原裝正品 |
詢價(jià) | ||
MOT |
22+ |
DIP-4 |
2987 |
絕對(duì)全新原裝現(xiàn)貨供應(yīng)! |
詢價(jià) |
