IRFD113中文資料GESS數(shù)據(jù)手冊PDF規(guī)格書
IRFD113規(guī)格書詳情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
產(chǎn)品屬性
- 型號：
IRFD113
- 功能描述：
MOSFET N-Chan 100V 1.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
1990+ |
74 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
MOT |
23+ |
65480 |
詢價 | ||||
GESS |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
94+ |
DIP-4 |
5 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2016+ |
DIP-4 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
24+ |
DIP-4 |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 | ||
IR |
23+ |
DIP-4 |
1350 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP-4 |
8238 |
詢價 | |||
雷達 |
2020+ |
DIP-4 |
8400 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
