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IRFD112中文資料GESS數(shù)據(jù)手冊PDF規(guī)格書

IRFD112
廠商型號

IRFD112

功能描述

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

文件大小

112.88 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 GE Solid State
企業(yè)簡稱

GESS

中文名稱

GE Solid State

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-4 22:50:00

IRFD112規(guī)格書詳情

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

產(chǎn)品屬性

  • 型號:

    IRFD112

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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