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IRFD110PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFD110PBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? 175 °C Operating Temperature
? Fast Switching and Ease of Paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRFD110PBF
- 功能描述：
MOSFET 100V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
DIP4 |
5000 |
全新原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
NA/ |
150 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
vishay |
2020+ |
DIP-4 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
VISHAY/威世 |
22+ |
DIP4 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
VISHAY/威世 |
24+ |
DIP4 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
VISHAY |
24+ |
HVMDIP-4 |
65300 |
一級代理/放心采購 |
詢價 | ||
23+ |
DIP-4 |
12550 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
VISHAY |
24+ |
DIP-4 |
12000 |
VISHAY專營進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
VISHAY/威世 |
23+ |
DIP4 |
90000 |
一定原裝正品/香港現(xiàn)貨 |
詢價 | ||
SILICONIX (VISHAY) |
23+ |
原廠原封 |
42290 |
訂貨1周 原裝正品 |
詢價 |
