IRFD121中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRFD121 |
| 功能描述 | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |
| 文件大小 |
360.08 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | Harris Corporation |
| 企業(yè)簡稱 |
HARRIS |
| 中文名稱 | Harris Corporation |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-5-4 9:30:00 |
| 人工找貨 | IRFD121價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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Description
These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Features
? 1.3A and 1.1A, 80V and 100V
? rDS(ON) = 0.30? and 0.04Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD121
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
DIP-4 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
MOT |
23+ |
65480 |
詢價(jià) | ||||
HAR |
24+ |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | |||
MOT |
92+ |
DIP-4 |
4 |
原裝 |
詢價(jià) | ||
IR |
23+ |
DIP-4 |
6100 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
24+ |
N/A |
48000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
IR |
23+ |
DIP-4 |
8238 |
詢價(jià) | |||
MOTOROLA |
23+ |
DIP4 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
17+ |
DIP-4 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) |
