| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-CHANNELPOWERMOSFET | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-CHANNELPOWERMOSFET | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
400VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
400VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
6A400VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease | IRF International Rectifier | IRF | ||
N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET Description ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerMOStransistorAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
SMPSMOSFET SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand | IRF International Rectifier | IRF | ||
POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap | DCCOM Dc Components | DCCOM | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert | A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司 | A-POWER | ||
N-channelmosfettransistor Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A ?1.gate2.drain3.source | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SEMIHOW |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
SEMIHOW |
23+ |
NA/ |
5290 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價(jià) | ||
S |
23+ |
TO-220F |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
S |
TO-220F |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
SEMIHOW |
23+ |
TO-220F |
122999 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
S |
23+ |
TO-220F |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
SEMIHOW |
23+ |
TO-220F |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SEMIHOW |
23+ |
TO-220F |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
st |
2023+ |
TO-220F |
80000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
24+ |
TO220 |
2 |
詢價(jià) |
相關(guān)規(guī)格書
更多- HGTG11N120CND
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- HI4P509-5
- HI5628_6IN
- HI5703KCB
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