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首頁 >HM730>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HM730	文件：302.49 Kbytes Page：8 Pages	400V N-Channel MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HM730F	文件：302.49 Kbytes Page：8 Pages	400V N-Channel MOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
I730	文件：1.76217 Mbytes Page：12 Pages	6A400VN-channelEnhancementModePowerMOSFET	WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司	WXDH
IRC730	文件：223.63 Kbytes Page：8 Pages	PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease	IRF International Rectifier	IRF
IRF730	文件：94.17 Kbytes Page：8 Pages	N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET Description ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRF730	文件：59.69 Kbytes Page：7 Pages	PowerMOStransistorAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
IRF730	文件：177.13 Kbytes Page：6 Pages	N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF730	文件：898.57 Kbytes Page：10 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF730	文件：54.27 Kbytes Page：7 Pages	5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRF730	文件：102.73 Kbytes Page：8 Pages	SMPSMOSFET SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand	IRF International Rectifier	IRF
IRF730	文件：79.4 Kbytes Page：3 Pages	POWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp	SUNTAC Suntac Electronic Corp.	SUNTAC
IRF730	文件：206.5 Kbytes Page：2 Pages	TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap	DCCOM Dc Components	DCCOM
IRF730	文件：134.68 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730	文件：95.25 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert	A-POWERAdvanced Power Electronics Corp. 富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司	A-POWER
IRF730	文件：128.44 Kbytes Page：1 Pages	N-channelmosfettransistor Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A ?1.gate2.drain3.source	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF730	文件：848.7 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF730	文件：277.08 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730	文件：341.04 Kbytes Page：7 Pages	N-ChannelPowerMOSFET DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00?@VGS=10V ●Ultralowgatec	NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司	NELLSEMI
IRF730	文件：100.66 Kbytes Page：3 Pages	6.0A400VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
IRF730	文件：355.59 Kbytes Page：16 Pages	HighPowerFactor/LowTHD	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市國宇半導(dǎo)體科技有限公司	HM730	HMSEMI	23+	TO-220	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	HM730	HMSEMI	2022+	TO-220	50000	原廠代理終端免費(fèi)提供樣品	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	HM730	Hmsemi	23+	TO-220	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市維爾達(dá)電子有限公司	HM730	toshiba	2023+	TO-220	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	HM730	HMSEMI	23+	TO-220	6800	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	HM730	HMSEMI	23+	TO-220	6800	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	HM730	Hmsemi	24+	TO-TO-220	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	HM730K	HMSEMI	23+	TO-252	33226	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市寶芯創(chuàng)電子有限公司	HM73-101R0DLFTR13	BI	14+	SMD	861	原廠原裝倉庫現(xiàn)貨,歡迎咨詢	詢價(jià)
深圳市粵駿騰電子科技有限公司	HM73-101R0DLFTR13	BI	24+	SMD	9558	全新原裝數(shù)量均有多電話咨詢	詢價(jià)

更多HM730供應(yīng)商更新時(shí)間2024-11-19 10:05:00

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