零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
600V/6.0AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
600V/6.0AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
POWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
POWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A) Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri | IRF International Rectifier | IRF | ||
VishaySiliconix FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A | KECKEC CORPORATION KEC株式會社 | KEC | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SEMIHOW |
23+ |
I-PAK |
10000 |
公司只做原裝正品 |
詢價 | ||
SEMIHOW |
2022+ |
TO-251 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
semihow |
23+ |
I-PAK |
6000 |
原裝正品,支持實單 |
詢價 | ||
SEMIHOW |
23+ |
TO-251 |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
SEMIHOW |
23+ |
TO-251 |
6800 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
semihow |
24+ |
I-PAK |
37650 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
SEMIHOW |
22+23+ |
TO-251 |
24313 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
SEMIHOW |
24+ |
TO-251 |
9860 |
一級代理 |
詢價 | ||
SEMIHOW |
2022+ |
600 |
全新原裝 貨期兩周 |
詢價 | |||
SEMIHOW |
23+ |
TO-251A |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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