訂購數量 | 價格 |
---|---|
1+ |
首頁>HGT1S10N120BNS>詳情
HGT1S10N120BNS_FAIRCHILD/仙童半導體_IGBT 晶體管 35A 1200V NPT N-Ch一線半導體
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產品屬性
- 類型
描述
- 型號:
HGT1S10N120BNS
- 功能描述:
IGBT 晶體管 35A 1200V NPT N-Ch
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應商
- 企業(yè):
深圳市一線半導體有限公司
- 商鋪:
- 聯系人:
云S/廖S
- 手機:
19168775913
- 詢價:
- 電話:
0755-88608801
- 傳真:
0755-88608801
- 地址:
深圳市福田區(qū)福田街道福華社區(qū)福虹路4號華強花園C座7A
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